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# decode-dimms version 4.4

Memory Serial Presence Detect Decoder
By Philip Edelbrock, Christian Zuckschwerdt, Burkart Lingner,
Jean Delvare, Trent Piepho and others


Decoding EEPROM: /sys/bus/i2c/drivers/ee1004/4-0050
Guessing DIMM is in                              bank 1
Kernel driver used                               ee1004

---=== SPD EEPROM Information ===---
EEPROM CRC of bytes 0-125                        OK (0xBA31)
# of bytes written to SDRAM EEPROM               384
Total number of bytes in EEPROM                  512
Fundamental Memory type                          DDR4 SDRAM
SPD Revision                                     1.1
Module Type                                      SO-DIMM
EEPROM CRC of bytes 128-253                      OK (0x2355)

---=== Memory Characteristics ===---
Maximum module speed                             3200 MT/s (PC4-25600)
Size                                             16384 MB
Banks x Rows x Columns x Bits                    16 x 16 x 10 x 64
SDRAM Device Width                               8 bits
Ranks                                            2
Rank Mix                                         Symmetrical
Primary Bus Width                                64 bits
AA-RCD-RP-RAS (cycles)                           22-22-22-52
Supported CAS Latencies                          21T, 20T, 19T, 18T, 17T, 16T, 15T, 14T, 13T, 12T, 11T, 10T

---=== Timings at Standard Speeds ===---
AA-RCD-RP-RAS (cycles) as DDR4-2933              21-21-21-47
AA-RCD-RP-RAS (cycles) as DDR4-2666              19-19-19-43
AA-RCD-RP-RAS (cycles) as DDR4-2400              17-17-17-39
AA-RCD-RP-RAS (cycles) as DDR4-2133              15-15-15-35
AA-RCD-RP-RAS (cycles) as DDR4-1866              13-13-13-30
AA-RCD-RP-RAS (cycles) as DDR4-1600              11-11-11-26

---=== Timing Parameters ===---
Minimum Cycle Time (tCKmin)                      0.625 ns
Maximum Cycle Time (tCKmax)                      1.600 ns
Minimum CAS Latency Time (tAA)                   13.750 ns
Minimum RAS to CAS Delay (tRCD)                  13.750 ns
Minimum Row Precharge Delay (tRP)                13.750 ns
Minimum Active to Precharge Delay (tRAS)         32.000 ns
Minimum Active to Auto-Refresh Delay (tRC)       45.750 ns
Minimum Recovery Delay (tRFC1)                   350.000 ns
Minimum Recovery Delay (tRFC2)                   260.000 ns
Minimum Recovery Delay (tRFC4)                   160.000 ns
Minimum Four Activate Window Delay (tFAW)        21.000 ns
Minimum Row Active to Row Active Delay (tRRD_S)  3.300 ns
Minimum Row Active to Row Active Delay (tRRD_L)  4.901 ns
Minimum CAS to CAS Delay (tCCD_L)                5.000 ns
Minimum Write Recovery Time (tWR)                15.000 ns
Minimum Write to Read Time (tWTR_S)              2.500 ns
Minimum Write to Read Time (tWTR_L)              7.500 ns

---=== Other Information ===---
Package Type                                     Monolithic
Maximum Activate Count (MAC)                     Unlimited
Post Package Repair                              Not supported
Module Nominal Voltage                           1.2 V
Thermal Sensor                                   No

---=== Physical Characteristics ===---
Module Height                                    30 mm
Module Thickness                                 2 mm front, 2 mm back
Module Reference Card                            E revision 1

---=== Manufacturer Data ===---
Module Manufacturer                              Hangzhou Hikstorage Technology Co
DRAM Manufacturer                                Micron Technology
Manufacturing Location Code                      0x0F
Manufacturing Date                               2022-W19
Assembly Serial Number                           0x24100064
Part Number                                      HKED4162CAA1G4MB1   
Revision Code                                    0x31


Decoding EEPROM: /sys/bus/i2c/drivers/ee1004/4-0051
Guessing DIMM is in                              bank 2
Kernel driver used                               ee1004

---=== SPD EEPROM Information ===---
EEPROM CRC of bytes 0-125                        OK (0x850F)
# of bytes written to SDRAM EEPROM               384
Total number of bytes in EEPROM                  512
Fundamental Memory type                          DDR4 SDRAM
SPD Revision                                     1.2
Module Type                                      SO-DIMM
EEPROM CRC of bytes 128-253                      OK (0x08DB)

---=== Memory Characteristics ===---
Maximum module speed                             2666 MT/s (PC4-21300)
Size                                             8192 MB
Banks x Rows x Columns x Bits                    8 x 17 x 10 x 64
SDRAM Device Width                               16 bits
Ranks                                            1
Primary Bus Width                                64 bits
AA-RCD-RP-RAS (cycles)                           19-19-19-43
Supported CAS Latencies                          20T, 19T, 18T, 17T, 16T, 15T, 14T, 13T, 12T, 11T, 10T

---=== Timings at Standard Speeds ===---
AA-RCD-RP-RAS (cycles) as DDR4-2666              19-19-19-43
AA-RCD-RP-RAS (cycles) as DDR4-2400              17-17-17-39
AA-RCD-RP-RAS (cycles) as DDR4-2133              15-15-15-35
AA-RCD-RP-RAS (cycles) as DDR4-1866              13-13-13-30
AA-RCD-RP-RAS (cycles) as DDR4-1600              11-11-11-26

---=== Timing Parameters ===---
Minimum Cycle Time (tCKmin)                      0.750 ns
Maximum Cycle Time (tCKmax)                      1.600 ns
Minimum CAS Latency Time (tAA)                   13.750 ns
Minimum RAS to CAS Delay (tRCD)                  13.750 ns
Minimum Row Precharge Delay (tRP)                13.750 ns
Minimum Active to Precharge Delay (tRAS)         32.000 ns
Minimum Active to Auto-Refresh Delay (tRC)       45.750 ns
Minimum Recovery Delay (tRFC1)                   350.000 ns
Minimum Recovery Delay (tRFC2)                   260.000 ns
Minimum Recovery Delay (tRFC4)                   160.000 ns
Minimum Four Activate Window Delay (tFAW)        30.000 ns
Minimum Row Active to Row Active Delay (tRRD_S)  5.300 ns
Minimum Row Active to Row Active Delay (tRRD_L)  6.400 ns
Minimum CAS to CAS Delay (tCCD_L)                5.000 ns
Minimum Write Recovery Time (tWR)                15.000 ns
Minimum Write to Read Time (tWTR_S)              2.500 ns
Minimum Write to Read Time (tWTR_L)              7.500 ns

---=== Other Information ===---
Package Type                                     Monolithic
Maximum Activate Count (MAC)                     Unlimited
Post Package Repair                              One row per bank group
Soft PPR                                         Supported
Module Nominal Voltage                           1.2 V
Thermal Sensor                                   No

---=== Physical Characteristics ===---
Module Height                                    30 mm
Module Thickness                                 2 mm front, 2 mm back
Module Reference Card                            C revision 0

---=== Manufacturer Data ===---
Module Manufacturer                              Kingston
DRAM Manufacturer                                Micron Technology
Manufacturing Location Code                      0x04
Manufacturing Date                               2023-W39
Assembly Serial Number                           0x05416E69
Part Number                                      9905711-054.A00G    


Number of SDRAM DIMMs detected and decoded: 2